Difference between revisions of "Low temperature sintered TiO2 porous layer"
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− | == | + | ==Why== |
− | Conventionally it requires 450˚C to 500˚C to sinter the TiO2 porous layer which functioning as the photo-electrode in dye sensitized solar cell, it eliminates the | + | Conventionally it requires 450˚C to 500˚C to sinter the TiO2 porous layer which functioning as the photo-electrode in dye sensitized solar cell, it eliminates the participation of textile or plastic substrates due to its low heat resistance. |
+ | ===UV exposure with 150˚C sintering=== | ||
<gallery> | <gallery> | ||
File:experiment setting of 18NR-T TiO2 paste during UV sintering.jpg | File:experiment setting of 18NR-T TiO2 paste during UV sintering.jpg | ||
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File:18NR-T TiO2 paste during UV sintering2.jpg | File:18NR-T TiO2 paste during UV sintering2.jpg | ||
</gallery> | </gallery> | ||
+ | |||
+ | ===HCL additive in TiO2 paste=== | ||
==References== | ==References== |
Revision as of 14:59, 20 October 2023
Why
Conventionally it requires 450˚C to 500˚C to sinter the TiO2 porous layer which functioning as the photo-electrode in dye sensitized solar cell, it eliminates the participation of textile or plastic substrates due to its low heat resistance.
UV exposure with 150˚C sintering
HCL additive in TiO2 paste
References
- NIKLAS D.J. HANSEN. (2014). MICROWAVE ASSISTED SYNTHESIS OF TITANIUM DIOXIDE ELECTRODES FOR USE IN POLYMER DSSC MICROWAVE ASSISTED SYNTHESIS OF TITANIUM DIOXIDE ELECTRODES FOR USE IN POLYMER DSSC
- M. Fathy, H. Hassan, H. Hafez, M. Soliman, F. Abulfotuh, Abd El Hady B. Kashyout. (2022) Simple and Fast Microwave-Assisted Synthesis Methods of Nanocrystalline TiO2 and rGO Materials for Low-Cost Metal-Free DSSC Applications. https://doi.org/10.1021/acsomega.2c01455.
- Lin, Yu Hsein, Yung Chun Wu, Hsin Chiang You, Ping Hua Chen, Yi He Tsai, and Bo Yu Lai. 2014. “Ultra-Low Temperature Flexible Dye-Sensitized Solar Cell.” In 2014 International Symposium on Computer, Consumer and Control, 470–73. Taichung, Taiwan: IEEE. https://doi.org/10.1109/IS3C.2014.129.